The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Oct. 28, 2019
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM INCORPORATED, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 2224/10122 (2013.01); H01L 2224/1182 (2013.01); H01L 2224/13564 (2013.01); H01L 2224/13565 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/14133 (2013.01); H01L 2924/3025 (2013.01);
Abstract
An integrated device that includes a substrate, an interconnect portion and an interconnect structure. The interconnect portion is located over the substrate. The interconnect portion includes a plurality of interconnects and at least one dielectric layer. The interconnect structure is located over the interconnect portion. The interconnect structure includes an inner interconnect, a dielectric layer coupled to the inner interconnect, and an outer conductive layer coupled to the dielectric layer. The outer conductive layer is configured to operate as a shield for the inner interconnect.