The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Apr. 20, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Feng-Yi Chang, Tainan, TW;
Fu-Che Lee, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A patterning method includes the following steps. A mask layer is formed on a material layer. A first hole is formed in the mask layer by a first photolithography process. A first mask pattern is formed in the first hole. A second hole is formed in the mask layer by a second photolithography process. A first spacer is formed on an inner wall of the second hole. A second mask pattern is formed in the second hole after the step of forming the first spacer. The first spacer surrounds the second mask pattern in the second hole. The mask layer and the first spacer are removed. The pattern of the first mask pattern and the second mask pattern are transferred to the material layer by an etching process.