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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11672181 B1

PDFFull Text
Date of Patent:
Jun. 06, 2023

Filed:

Jun. 14, 2021

Magnetic random access memory

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Huang-Wen Tseng, Zhubei, TW;

Cheng-Chou Wu, Hsinchu, TW;

Che-Jui Chang, Changhua County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Mushfique Siddique

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); A61K 8/55 (2006.01); A61K 8/73 (2006.01); A61K 8/86 (2006.01); A61Q 11/00 (2006.01); G11C 11/15 (2006.01); A61K 8/34 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); A61K 8/55 (2013.01); A61K 8/731 (2013.01); A61K 8/86 (2013.01); A61Q 11/00 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); A61K 8/345 (2013.01); G11C 11/1659 (2013.01);
Abstract

A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

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