The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Mar. 29, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Gerben Doornbos, Kessel-Lo, BE;
Blandine Duriez, Brussels, BE;
Marcus Johannes Henricus Van Dal, Linden, BE;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/225 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10852 (2013.01); H01L 27/10805 (2013.01); H01L 27/10814 (2013.01); H01L 27/10885 (2013.01); H01L 29/0673 (2013.01); H01L 29/225 (2013.01); H01L 29/66742 (2013.01); H01L 29/785 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor transistor comprises a channel structure comprising a channel region and two source/drain regions located on respective sides of the channel region, wherein the channel region and the two source/drain regions are stacked up along a first direction. A gate structure surrounds the channel region.