The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Aug. 03, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen-Fa Lu, Kaohsiung, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Ching-Chung Hsu, Taichung, TW;

Chung-Long Chang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/027 (2006.01); H01L 21/288 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 21/0273 (2013.01); H01L 21/288 (2013.01); H01L 21/31144 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 23/3171 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2224/11 (2013.01);
Abstract

The present disclosure provides a method for manufacturing a semiconductor structure, including patterning a photo-sensitive polymer layer with a plurality of trenches by a first mask, the first mask having a first line pitch, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, the second mask having a second line pitch, the first mask and the second mask having substantially identical pattern topography, and the second line pitch being greater than the first line pitch, and selectively plating conductive material in the plurality of trenches.


Find Patent Forward Citations

Loading…