The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jul. 10, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Szu-Chi Yang, Hsinchu, TW;
Allen Chien, Hsinchu, TW;
Cheng-Ting Ding, Hsinchu, TW;
Chien-Chih Lin, Hsinchu, TW;
Chien-Chih Lee, New Taipei, TW;
Shih-Hao Lin, Hsinchu, TW;
Tsung-Hung Lee, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Po-Kai Hsiao, Changhua County, TW;
Tsai-Yu Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.