The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jan. 10, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Jun Qian, Sherwood, OR (US);
Hu Kang, Tualatin, OR (US);
Adrien LaVoie, Newberg, OR (US);
Seiji Matsuyama, Toyama, JP;
Purushottam Kumar, Hillsboro, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/02 (2013.01); C23C 16/45525 (2013.01); H01J 37/32899 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01);
Abstract
Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.