The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Dec. 25, 2020
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Wei-Lun Hsu, Taichung, TW;

Hung-Lin Shih, Hsinchu, TW;

Che-Hung Huang, Hsinchu, TW;

Ping-Cheng Hsu, Taipei, TW;

Hsu-Yang Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H10B 12/485 (2023.02); H01L 21/76224 (2013.01); H01L 21/76877 (2013.01); H10B 12/053 (2023.02); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H10B 12/482 (2023.02);
Abstract

A method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; forming a conductive layer in the trench; forming a metal layer on the conductive layer; forming a mask layer on the metal layer; and patterning the mask layer, the metal layer, and the conductive layer to form a bit line structure.


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