The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jan. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jiun Yi Wu, Hsinchu, TW;

Chien-Hsun Lee, Hsinchu, TW;

Chewn-Pu Jou, Hsinchu, TW;

Fu-Lung Hsueh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 3/08 (2006.01); H01P 11/00 (2006.01); H01P 3/02 (2006.01); H01P 3/06 (2006.01);
U.S. Cl.
CPC ...
H01P 3/082 (2013.01); H01P 3/026 (2013.01); H01P 3/06 (2013.01); H01P 11/003 (2013.01);
Abstract

A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.


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