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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11664423 B1

PDFFull Text
Date of Patent:
May. 30, 2023

Filed:

Aug. 18, 2020

Method for forming a source/drain of a semiconductor device having an insulating stack in a recess structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chao-Shuo Chen, Hsinchu, TW;

Chia-Der Chang, Hsinchu, TW;

Yi-Jing Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/28114 (2013.01); H01L 21/28512 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/762 (2013.01); H01L 21/76229 (2013.01); H01L 21/76897 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0653 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, an insulating stack formed over the substrate, a vertical structure formed through the insulating stack, a source/drain region formed over the vertical structure, and an isolation structure formed adjacent to the source/drain region and protruding the insulating stack. The source/drain region can include a first side surface and a second side surface. A lateral separation between the first side surface and the vertical structure can be greater than an other lateral separation between the second side surface and the vertical structure.

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