The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jul. 12, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Inventors:
Guo-Huei Wu, Tainan, TW;
Jerry Chang Jui Kao, Taipei, TW;
Chih-Liang Chen, Hsinchu, TW;
Hui-Zhong Zhuang, Kaohsiung, TW;
Jung-Chan Yang, Taoyuan County, TW;
Lee-Chung Lu, Taipei, TW;
Xiangdong Chen, San Diego, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/5286 (2013.01);
Abstract
A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.