The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Mar. 11, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hao-Yi Tsai, Hsinchu, TW;

Tzuan-Horng Liu, Taoyuan, TW;

Ting Hao Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5381 (2013.01); H01L 23/3107 (2013.01); H01L 23/481 (2013.01); H01L 24/08 (2013.01); H01L 24/24 (2013.01); H01L 25/0655 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/24225 (2013.01);
Abstract

A structure including a first die, a second die, a first insulating encapsulant, an interconnection die, and a second insulating encapsulant is provided. The first die includes a first bonding structure. The first bonding structure includes a first dielectric layer and a first conductive pad embedded in the first dielectric layer. The second die includes a second bonding structure. The second bonding structure includes a second dielectric layer and a second conductive pad embedded in the second dielectric layer. The first insulating encapsulant laterally encapsulates the first die and the second die. The interconnection die includes a third bonding structure. The third bonding structure includes a third dielectric layer and third conductive pads embedded in the third dielectric layer. The second insulating encapsulant laterally encapsulates the interconnection die. The third bonding structure is in contact with the first bonding structure and the second bonding structure.


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