The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Nov. 30, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Matthew John Sherbin, Dallas, TX (US);

Michael Todd Wyant, Dallas, TX (US);

Christopher Daniel Manack, Flower Mound, TX (US);

Hiroyuki Sada, Beppu, JP;

Shoichi Iriguchi, Beppu, JP;

Genki Yano, Beppu, JP;

Ming Zhu, Sichuan, CN;

Joseph O. Liu, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/78 (2006.01); B23K 26/364 (2014.01); H01L 23/00 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 26/364 (2015.10); H01L 21/268 (2013.01); H01L 23/562 (2013.01);
Abstract

A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.


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