The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jun. 02, 2021
Micron Technology, Inc., Boise, ID (US);
Karthik Sarpatwari, Boise, ID (US);
Nevil N. Gajera, Meridian, ID (US);
Lingming Yang, Meridian, ID (US);
Yen Chun Lee, Boise, ID (US);
Jessica Chen, Boise, ID (US);
Francesco Douglas Verna-Ketel, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Systems, methods and apparatus to program memory cells to an intermediate state. A first voltage pulse is applied in a first polarity across each respective memory cell among the memory cells to move its threshold voltage in the first polarity to a first voltage region representative of a first value. A second voltage pulse is then applied in a second polarity to further move its threshold voltage in the first polarity to a second voltage region representative of a second value and the intermediate state. A magnitude of the second voltage pulse applied for the memory cells is controlled by increasing the magnitude in increments until the memory cells are sensed to be conductive. Optionally, prior to the first voltage pulse, a third voltage pulse is applied in the second polarity to cancel or reduce a drift in threshold voltages of the respective memory cell.