The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Mar. 10, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jeffrey S. McNeil, Jr., Nampa, ID (US);

Niccolo′ Righetti, Boise, ID (US);

Kishore K. Muchherla, Fremont, CA (US);

Akira Goda, Boise, ID (US);

Todd A. Marquart, Boise, ID (US);

Mark A. Helm, Santa Cruz, CA (US);

Gil Golov, Backnang, DE;

Jeremy Binfet, Boise, ID (US);

Carmine Miccoli, Boise, ID (US);

Giuseppina Puzzilli, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/30 (2006.01); G06F 11/07 (2006.01); G06F 1/30 (2006.01); G11C 5/14 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 11/3058 (2013.01); G06F 1/30 (2013.01); G06F 11/076 (2013.01); G06F 11/0772 (2013.01); G06F 11/0787 (2013.01); G06F 11/3037 (2013.01); G11C 5/141 (2013.01); G11C 16/3404 (2013.01); G11C 16/3418 (2013.01); G06F 2201/84 (2013.01);
Abstract

A method includes writing received data sequentially to a particular location of a cyclic buffer of a memory device according to a first set of threshold voltage distributions. The method further includes performing a touch up operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions in response to a determination that a trigger event has occurred. The second set of threshold voltage distributions can have a larger read window between adjacent threshold voltage distributions of the second set than that of the first set of threshold voltage distributions.


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