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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11658233 B1

PDFFull Text
Date of Patent:
May. 23, 2023

Filed:

Nov. 19, 2019

Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget

Applicant:

Cree, Inc., Durham, NC (US);

Inventor:

Kyoung-Keun Lee, Cary, NC (US);

Assignee:

WOLFSPEED, INC., Durham, NC (US);

Attorney:

BakerHostetler

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/765 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/0217 (2013.01); H01L 21/28581 (2013.01); H01L 21/28587 (2013.01); H01L 21/31111 (2013.01); H01L 21/765 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H03F 3/21 (2013.01); H03F 2200/451 (2013.01);
Abstract

A device including a substrate, a passivation layer, a source, a gate, a drain, and the gate including at least one step portion. Where the at least one step portion is arranged within the passivation layer, the at least one step portion includes at least one first surface and at least one second surface, where the at least one first surface is connected to the at least one second surface, where the gate includes a third surface, and where the at least one step portion is connected to the third surface. A process is also disclosed.

Find Patent Forward Citations

Lee, Kyoung-Keun. (2023). Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget (U.S. Patent No. 11658233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11658233

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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