The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Mar. 09, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Xuan Huang, Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Yi-Hsun Chiu, Hsinchu County, TW;
Yi-Bo Liao, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Wei-Cheng Lin, Taichung, TW;
Wei-An Lai, Hsinchu, TW;
Ming Chian Tsai, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsin Chu, TW;
Hou-Yu Chen, Hsinchu County, TW;
Chun-Yuan Chen, Hsinchu, TW;
Huan-Chieh Su, Changhua County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.