The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jun. 26, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Masaaki Taniyama, Tokyo, JP;

Kenichi Kuwahara, Tokyo, JP;

Satoshi Une, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01);
Abstract

The invention provides a plasma processing method in which plasma etching is performed on a film to be etched by using a mask, the plasma processing method including: a deposition step of depositing a deposition film containing a boron element on the mask while a radio frequency power is supplied to a sample table on which a sample formed with the film to be etched is placed; and an etching step of etching the film to be etched by using plasma after the deposition step.


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