The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Sep. 22, 2021
Globalfoundries U.s. Inc., Malta, NY (US);
Mankyu Yang, Fishkill, NY (US);
Richard Taylor, III, Campbell, CA (US);
Alexander Derrickson, Saratoga Springs, NY (US);
Alexander Martin, Greenfield Center, NY (US);
Jagar Singh, Clifton Park, NY (US);
Judson Robert Holt, Ballston Lake, NY (US);
Haiting Wang, Clifton Park, NY (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.