The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Oct. 14, 2020
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Tsung-Wei Huang, Taichung, TW;
Chao-Ching Chang, Kaohsiung, TW;
Yun-Wei Cheng, Taipei, TW;
Chih-Lung Cheng, Tainan, TW;
Yen-Chang Chen, Tainan, TW;
Wen-Jen Tsai, Kaohsiung, TW;
Cheng Han Lin, Tainan, TW;
Yu-Hsun Chih, Kaohsiung, TW;
Sheng-Chan Li, Tainan, TW;
Sheng-Chau Chen, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.