The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Oct. 28, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Su-Horng Lin, Hsinchu, TW;
Chi-Ming Yang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); H01L 21/66 (2006.01); G01N 23/02 (2006.01); G01N 23/083 (2018.01); G01N 23/201 (2018.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 23/02 (2013.01); G01N 23/083 (2013.01); G01N 23/201 (2013.01);
Abstract
A method includes illuminating a wafer by an X-ray, detecting a spatial domain pattern produced when illuminating the wafer by the X-ray, identifying at least one peak from the detected spatial domain pattern, and analyzing the at least one peak to obtain a morphology of a transistor structure of the wafer.