The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Jul. 01, 2021
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Chih-Yu Jen, San Jose, CA (US);

Long Ma, San Jose, CA (US);

Yongjun Wang, Pleasanton, CA (US);

Jun Jiang, San Jose, CA (US);

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/147 (2006.01); H01J 37/26 (2006.01); H01J 37/30 (2006.01); H01J 37/153 (2006.01); H01J 37/22 (2006.01); H01J 37/28 (2006.01); H01J 37/21 (2006.01);
U.S. Cl.
CPC ...
H01J 37/1474 (2013.01); H01J 37/153 (2013.01); H01J 37/21 (2013.01); H01J 37/222 (2013.01); H01J 37/263 (2013.01); H01J 37/28 (2013.01); H01J 37/30 (2013.01); H01J 2237/082 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/2817 (2013.01);
Abstract

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.


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