The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Mar. 23, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Perng-Fei Yuh, Hsinchu, TW;

Shao-Ting Wu, Hisinchu, TW;

Yu-Fan Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 7/14 (2013.01); G11C 11/1655 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01);
Abstract

A bias voltage generator includes a first current path, a first voltage clamp device, and a first buffer. The bias voltage generator receives a reference voltage and generates a first bias voltage based on a voltage difference between the reference voltage and a first drive voltage, the first voltage clamp device generates the first drive voltage based on the first bias voltage by applying the first drive voltage to the first current path, and the first buffer receives the first bias voltage and generates a second bias voltage based on the first bias voltage. A second current path includes a resistance-based memory device, and a second voltage clamp device generates a second drive voltage based on the second bias voltage and applies the second drive voltage to the second current path.


Find Patent Forward Citations

Loading…