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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11650505 B1

PDFFull Text
Date of Patent:
May. 16, 2023

Filed:

Aug. 04, 2015

Resist underlayer film-forming composition containing novolac resin reacted with aromatic methylol compound

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Hirokazu Nishimaki, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Keisuke Hashimoto, Toyama, JP;

Takafumi Endo, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Martin J Angebranndt

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); C08G 12/26 (2006.01); C08G 14/06 (2006.01); C09D 161/34 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 12/26 (2013.01); C08G 14/06 (2013.01); C09D 161/34 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/094 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/2037 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract

A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1): The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

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