The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Nov. 29, 2018
Lam Research Corporation, Fremont, CA (US);
Ce Qin, Fremont, CA (US);
Zhongkui Tan, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Sam Do Lee, Newark, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiOlayer and etching a SiN layer. Etching a SiOlayer comprises flowing a SiOetching gas into the plasma processing chamber, wherein the SiOetching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SFand NF, generating a plasma from the SiOetching gas, providing a bias, and stopping the SiOlayer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.