The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Feb. 14, 2020
Applicant:

Axcelis Technologies, Inc., Beverly, MA (US);

Inventors:

James DeLuca, Beverly, MA (US);

Andy Ray, Newburyport, MA (US);

Neil Demario, Fort Myers, FL (US);

Rosario Mollica, Ipswich, MA (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/05 (2006.01); H01J 37/304 (2006.01); H01J 37/244 (2006.01); H01J 37/24 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/05 (2013.01); H01J 37/243 (2013.01); H01J 37/244 (2013.01); H01J 37/304 (2013.01); H01J 37/32357 (2013.01); H01J 2237/24535 (2013.01); H01J 2237/31701 (2013.01);
Abstract

An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.


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