The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Sep. 07, 2021
Micron Technology, Inc., Boise, ID (US);
Cole Smith, Leuven, BE;
Ramey M. Abdelrahaman, Boise, ID (US);
Silvia Borsari, Boise, ID (US);
Chris M. Carlson, Nampa, ID (US);
David Daycock, Woodhaven, SG;
Matthew J. King, Boise, ID (US);
Jin Lu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. A wall is formed in individual of the trenches laterally-between immediately-laterally-adjacent of the memory-block regions. The forming of the wall comprises lining sides of the trenches with insulative material comprising at least one of an insulative nitride and elemental-form boron. A core material is formed in the trenches to span laterally-between the at least one of the insulative nitride and the elemental-form boron. Structure independent of method is disclosed.