The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Feb. 07, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wang-Chun Huang, Kaohsiung, TW;
Ching-Wei Tsai, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A structure and formation method of a semiconductor device is provided. The method includes forming a semiconductor stack having first sacrificial layers and first semiconductor layers laid out alternately. The method also includes patterning the semiconductor stack to form a first structure and a second structure. The method further includes replacing the second structure with a third structure having second sacrificial layers and second semiconductor layers laid out alternately. In addition, the method includes removing the first sacrificial layers in the first structure and the second sacrificial layers in the third structure. The method includes forming a first metal gate stack and a second metal gate stack to wrap around each of the first semiconductor layers in the first structure and each of the second semiconductor layers in the third structure, respectively.