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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11637240 B1

PDFFull Text
Date of Patent:
Apr. 25, 2023

Filed:

Apr. 09, 2020

Semiconductor structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsing-Lien Lin, Hsin-Chu, TW;

Fu-Ting Sung, Taoyuan County, TW;

Ching Ju Yang, Hsinchu, TW;

Chii-Ming Wu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT Law

Anthony King

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 13/0007 (2013.01); H01L 27/2436 (2013.01); H01L 45/1206 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01);
Abstract

A semiconductor memory structure includes a memory cell, an encapsulation layer over a sidewall of the memory cell, and a nucleation layer between the sidewall of the memory cell and the encapsulation layer. The memory cell includes a top electrode, a bottom electrode and a data-storage element sandwiched between the bottom electrode and the top electrode. The nucleation layer includes metal oxide.

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Quick Actions:

Lin, Hsing-Lien. (2023). Semiconductor structure and method for forming the same (U.S. Patent No. 11637240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11637240

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