The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Jul. 22, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Feng Yin, Hsinchu County, TW;
Chia-Jung Yu, Hsinchu, TW;
Pin-Cheng Hsu, Hsinchu County, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a transistor. The transistor includes a gate electrode, a channel layer, a gate dielectric layer, a first source/drain region and a second source/drain region and a first spacer. The channel layer is disposed on the gate electrode. The gate dielectric layer is located between the channel layer and the gate electrode. The first source/drain region and the second source/drain region are disposed on the channel layer at opposite sides of the gate electrode, and at least one of the first and second source/drain regions includes a first portion and a second portion between the first portion and the gate electrode. The first spacer is disposed on the channel layer. The first spacer is disposed on a first sidewall of the second portion of the at least one of the first and second source/drain regions, and the first portion is disposed on the first spacer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile