The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Jan. 25, 2021
Rambus Inc., San Jose, CA (US);
Lap Wai Chow, South Pasadena, CA (US);
Bryan J. Wang, South Lake Tahoe, CA (US);
James P. Baukus, Westlake Village, CA (US);
Ronald P. Cocchi, Huntington Beach, CA (US);
RAMBUS INC., San Jose, CA (US);
Abstract
A system and method for adding a source contact, a drain contact, and an apparent gate contact to a FinFET having a fin including a source region, a drain region, and a gate disposed over the fin forming one or more transistor junctions with the fin. The method comprises producing a source contact opening extending downward to a first region electrically coupled to the source region, a drain contact opening extending downward to a second region electrically coupled to the drain region, and a gate contact opening extending downward to a third region electrically isolated from the gate, and filling the source contact opening, the drain contact opening, and the gate contact opening with a conductive metal.