The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Jul. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventor:

Shih-Wei Hung, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/48 (2006.01); H01L 21/67 (2006.01); C23C 16/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); C23C 16/46 (2013.01); C23C 16/481 (2013.01);
Abstract

A method of fabricating a semiconductor device includes providing a system that includes a susceptor configured to retain a semiconductor substrate, a heating element, and a reflector integrated with the heating element, where the reflector includes a surface defined by a plurality of circumferential ridges having a separation distance that varies from a top portion of the reflector to a bottom portion of the reflector. The method further includes heating the semiconductor substrate and forming an epitaxial layer on the heated semiconductor substrate, where the heating includes emitting thermal energy from the heating element and reflecting the thermal energy from the surface of the reflector onto the semiconductor substrate, where an amount of the thermal energy received by an edge of the semiconductor substrate is more than an amount of the thermal energy received by a center of the semiconductor substrate.


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