The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Jan. 11, 2022
Micron Technology, Inc., Boise, ID (US);
Kulachet Tanpairoj, Santa Clara, CA (US);
Sebastien Andre Jean, Meridian, ID (US);
Kishore Kumar Muchherla, Fremont, CA (US);
Ashutosh Malshe, Fremont, CA (US);
Jianmin Huang, San Carlos, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The SLC memory cells serve as a high-speed cache providing SLC level performance with the storage capacity of a memory device with MLC memory cells. The proportion of cells configured as MLC vs the proportion that are configured as SLC storage may be configurable, and in some examples, the proportion may change during usage based upon configurable rules based upon memory device metrics. In some examples, when the device activity is below an activity threshold, the memory device may skip the SLC cache and place the data directly into the MLC storage to reduce power consumption.