The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Feb. 25, 2021
United Microelectronics Corp., Hsinchu, TW;
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chia-Jung Hsu, Tainan, TW;
Chun-Ya Chiu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.