The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Feb. 23, 2021
Applicant:
Kla Corporation, Milpitas, CA (US);
Inventor:
Hari Sriraman Pathangi, Chennai, IN;
Assignee:
KLA CORPORATION, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/22 (2006.01); H01J 37/28 (2006.01); H01J 37/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67288 (2013.01); H01J 37/20 (2013.01); H01J 37/222 (2013.01); H01J 37/28 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/2814 (2013.01);
Abstract
During electron beam imaging of a semiconductor wafer, the electron beam is adjusted to a first electron dose/nm/time value below a damage threshold for an image frame grab of a site on the semiconductor wafer. Then the electron beam is adjusted to a second electron dose/nm/time value different from the first electron dose/nm/time value for a second image frame grab of the site. The second electron dose/nm/time value can be above the damage threshold.