The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Jul. 25, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Wei-Xiang You, Kaohsiung, TW;
Pin Su, Hsinchu County, TW;
Kai-Shin Li, Hsinchu County, TW;
Chenming Hu, Oakland, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Abstract
A memory circuit includes a memory cell and a source line transistor. The memory cell includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The second transistor and the third transistor form an inverter electrically connected to a drain of the first transistor. The inverter is configured to store two states with different applied voltages. The fourth transistor is electrically connected to a node of the inverter. The source line transistor is electrically connected to the fourth transistor.