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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11629985 B1

PDFFull Text
Date of Patent:
Apr. 18, 2023

Filed:

Jun. 26, 2020

Method for regulating inert gas flow, method for preparing monocrystalline silicon, and monocrystalline silicon

Applicants:

Xi'an Eswin Material Technology Co., Ltd., Xi'an, CN;

Xi'an Eswin Silicon Wafer Technology Co., Ltd., Xi'an, CN;

Inventors:

Hao Pan, Xi'an, CN;

Hyunguk Jeon, Xi'an, CN;

Assignees:

XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD., Xi'an, CN;

XI'AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD., Xi'an, CN;

Attorney:

Maginot, Moore & Beck LLP

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 15/00 (2006.01); G01F 3/22 (2006.01); F26B 21/00 (2006.01); C30B 27/02 (2006.01); C30B 29/06 (2006.01); F26B 21/02 (2006.01);
U.S. Cl.
CPC ...
G01F 3/22 (2013.01); C30B 15/00 (2013.01); C30B 27/02 (2013.01); C30B 29/06 (2013.01); F26B 21/003 (2013.01); F26B 21/022 (2013.01);
Abstract

The present disclosure provides a method for regulating an inert gas flow in a crystal pulling furnace, a method for preparing monocrystalline silicon, and monocrystalline silicon. The method for regulating an inert gas flow includes introducing the inert gas into a main furnace chamber of the crystal pulling furnace from an auxiliary furnace chamber of the crystal pulling furnace, and regulating a flow direction of the inert gas flow introduced into the auxiliary furnace chamber of the crystal pulling furnace.

Find Patent Forward Citations

Pan, Hao. (2023). Method for regulating inert gas flow, method for preparing monocrystalline silicon, and monocrystalline silicon (U.S. Patent No. 11629985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11629985

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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