The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Oct. 28, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yang-Che Chen, Hsinchu, TW;
Chen-Hua Lin, Douliu, TW;
Huang-Wen Tseng, Zhubei, TW;
Victor Chiang Liang, Hsinchu, TW;
Chwen-Ming Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3736 (2013.01); H01L 23/3675 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/14519 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32505 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/33519 (2013.01); H01L 2224/73153 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/92225 (2013.01);
Abstract
A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.