The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Apr. 26, 2019
Intel Corporation, Santa Clara, CA (US);
Nathan Strutt, Beaverton, OR (US);
Albert Chen, Portland, OR (US);
Pedro Quintero, Beaverton, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory apparatus includes an interconnect in a first dielectric above a substrate and a structure above the interconnect, where the structure includes a diffusion barrier material and covers the interconnect. The memory apparatus further includes a resistive random-access memory (RRAM) device coupled to the interconnect. The RRAM device includes a first electrode on a portion of the structure, a stoichiometric layer having a metal and oxygen on the first electrode, a non-stoichiometric layer including the metal and oxygen on the stoichiometric layer. A second electrode including a barrier material is on the non-stoichiometric layer. In some embodiments, the RRAM device further includes a third electrode on the second electrode. To prevent uncontrolled oxidation during a fabrication process a spacer may be directly adjacent to the RRAM device, where the spacer includes a second dielectric.