The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Jun. 08, 2022
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Assignee:
SILTRONIC AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/32 (2006.01); C30B 15/20 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); C30B 15/206 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); H01L 21/02381 (2013.01); H01L 21/02428 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02598 (2013.01); H01L 29/16 (2013.01);
Abstract
Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3×10atoms/cmand not more than 6.0×10atoms/cm; a resistivity of the substrate wafer of not less than 5 mΩcm and not more than 10 mΩcm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.