The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Apr. 14, 2020
Applicant:
Etron Technology, Inc., Hsinchu, TW;
Inventors:
Chao-Chun Lu, Taipei, TW;
Li-Ping Huang, Taipei, TW;
Assignees:
Etron Technology, Inc., Hsinchu, TW;
Invention And Collaboration Laboratory Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 29/1083 (2013.01); H01L 29/785 (2013.01); H01L 29/7833 (2013.01); H01L 29/7835 (2013.01);
Abstract
A transistor structure includes a gate, a spacer, a channel region, a first concave, and a first conductive region. The gate is above a silicon surface. The spacer is above the silicon surface and at least covers a sidewall of the gate. The channel region is under the silicon surface. The first conductive region is at least partially formed in the first concave, wherein a conductive region of a neighborhood transistor structure next to the transistor structure is at least partially formed in the first concave.