The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Oct. 26, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Martin Christopher Holland, Hsinchu, TW;
Blandine Duriez, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/0669 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); B82Y 10/00 (2013.01);
Abstract
Provided herein are tapered nanowires that comprise germanium and gallium, as well as methods of forming the same. The described nanowires may also include one or more sections of a second semiconductor material. Methods of the disclosure may include vapor-liquid-solid epitaxy with a gallium catalyst. The described methods may also include depositing a gallium seed on a surface of a substrate by charging an area of the substrate using an electron beam, and directing a gallium ion beam across the surface of the substrate.