The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Oct. 19, 2020
United Microelectronics Corp., Hsinchu, TW;
Ping-Chia Shih, Tainan, TW;
Kuei-Ya Chuang, Chiayi County, TW;
Chuang-Hsin Chueh, New Taipei, TW;
Ming-Che Tsai, Tainan, TW;
Wen-Lin Wang, Kaohsiung, TW;
Yi-Chun Teng, Taichung, TW;
Ssu-Yin Liu, Kaohsiung, TW;
Wan-Chun Liao, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.