The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

Dec. 02, 2020
Applicant:

Cornell University, Ithaca, NY (US);

Inventors:

David G. Lishan, Clearwater, FL (US);

Kyle Dorsey, Ithaca, NY (US);

Vincent J. Genova, Ithaca, NY (US);

Assignee:

Cornell University, Ithaca, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/263 (2006.01); C23C 14/35 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2633 (2013.01); C23C 14/35 (2013.01); H01L 21/02266 (2013.01); H01L 21/32131 (2013.01); H01L 21/32139 (2013.01);
Abstract

The present invention provides a method for removing re-sputtered material on a substrate. A process chamber having a plasma source and a substrate support is provided along with the substrate having an upper surface and a lower surface. A masking material having a patterned sidewall is patterned onto the upper surface of the substrate along with a sacrificial layer between the upper surface of the substrate and the masking material. The lower surface of the substrate is placed onto the substrate support. A plasma is generated using the plasma source. The substrate is processed on the substrate support using the generated plasma. The sacrificial layer is removed after the processing of the substrate.


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