The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Aug. 14, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Hung Cheng, Tainan, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Cheng-Ta Wu, Shueishang Township, TW;
Xiaomeng Chen, Baoshan Township, TW;
Yen-Chang Chu, Tainan, TW;
Yeur-Luen Tu, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/103 (2006.01); H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/109 (2006.01); H01L 27/146 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035254 (2013.01); H01L 27/1464 (2013.01); H01L 27/14638 (2013.01); H01L 27/14687 (2013.01); H01L 31/028 (2013.01); H01L 31/0232 (2013.01); H01L 31/02327 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); H01L 31/18 (2013.01); H01L 31/1892 (2013.01); Y02E 10/50 (2013.01);
Abstract
A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.