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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11610995 B1

PDFFull Text
Date of Patent:
Mar. 21, 2023

Filed:

Sep. 09, 2022

Methods of forming dislocation enhanced strain in nmos and pmos structures

Applicant:

Daedalus Prime Llc, Bronxville, NY (US);

Inventors:

Michael Jackson, Portland, OR (US);

Anand Murthy, Portland, OR (US);

Glenn Glass, Beaverton, OR (US);

Saurabh Morarka, Hillsboro, OR (US);

Chandra Mohapatra, Beaverton, OR (US);

Assignee:

Daedalus Prime LLC, Bronxville, NY (US);

Attorney:

Kinney & Lange, P. A.

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/32 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/1054 (2013.01); H01L 29/32 (2013.01); H01L 29/66568 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01);
Abstract

Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

Find Patent Forward Citations

Jackson, Michael. (2023). Methods of forming dislocation enhanced strain in nmos and pmos structures (U.S. Patent No. 11610995). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11610995

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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