The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Oct. 26, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Fen Chen, Taoyuan, TW;
Tsung-Ying Liu, Hsin-Chu, TW;
Yeh-Hsun Fang, Hsin-Chu, TW;
Bang-Yu Huang, Zhubei, TW;
Chui-Ya Peng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d) above the at least one first trench. A first depth parameter (t) of the second depth (d) relative to the first depth (d) is determined. The processing temperature (T) is then determined based on the first depth parameter (t).