The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Aug. 23, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yu-Hung Cheng, Tainan, TW;
Cheng-Ta Wu, Chiayi County, TW;
Yeur-Luen Tu, Taichung, TW;
Ching-Pei Su, Hsinchu, TW;
Tung-I Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor wafer and method for manufacturing thereof are provided. The semiconductor wafer includes a handling substrate and a silicon layer over the handling substrate and having a {111} facet at an edge of a top surface of the silicon layer. The a defect count on the top surface of the silicon layer is less than about 15 each semiconductor wafer. The method includes the following operations: a semiconductor-on-insulator (SOI) substrate is provided, wherein the SOI substrate has a handling substrate, a silicon layer over the handling substrate, and a silicon germanium layer over the silicon layer; and the silicon germanium layer is etched at a first temperature with hydrochloric acid to expose a first surface of the silicon layer.