The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Dec. 30, 2019
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Takeshi Sasami, Joetsu, JP;

Kenji Yamada, Joetsu, JP;

Jun Hatakeyama, Joetsu, JP;

Satoshi Watanabe, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); C07C 381/12 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); C08F 212/08 (2006.01); C08F 220/38 (2006.01); C08F 220/28 (2006.01); C08F 220/24 (2006.01); G03F 7/32 (2006.01); C08K 5/095 (2006.01); C08F 220/30 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); C08F 212/08 (2013.01); C08F 220/24 (2013.01); C08F 220/282 (2020.02); C08F 220/30 (2013.01); C08F 220/382 (2020.02); C08K 5/095 (2013.01); G03F 7/0045 (2013.01); G03F 7/0397 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01);
Abstract

The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance.


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