The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Dec. 17, 2020
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Eric Miller, Watervliet, NY (US);
Jeffrey C. Shearer, Albany, NY (US);
Su Chen Fan, Cohoes, NY (US);
Heng Wu, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure and a method of making the same includes a first recessed region in a semiconductor structure, the first recessed region defining a first opening with a first positive tapering profile, as at least part of the first positive tapering profile, widening the first opening in a direction towards a top source/drain region of the semiconductor structure at a first tapering angle, and a top source/drain contact within the first opening, the top source/drain contact surrounding a surface of the top source/drain region. The semiconductor structure further includes a protective liner located at an interface between a bottom portion of the top source/drain region, a top spacer adjacent to the top source/drain region and a dielectric material between two consecutive top source/drain regions, the protective liner protects the top source/drain regions during contact patterning.